High quantum efficiency InGaN/GaN structures emitting at 540 nm

Autor:	M. J. Godfrey, Menno J. Kappers, Philip Dawson, Colin J. Humphreys, Mary E. Vickers, Ej Thrush, Ranjan Datta, Darren M. Graham, P. M. F. J. Costa
Rok vydání:	2006
Předmět:	Materials science Photoluminescence business.industry Multiple quantum Condensed Matter Physics Condensed Matter::Materials Science Wavelength Stack (abstract data type) Transmission electron microscopy Radiative transfer Optoelectronics Quantum efficiency business Quantum
Zdroj:	physica status solidi c. 3:1970-1973
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200565252
Popis:	We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8%. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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