| Autor: |
W. West, J. Barrette, D. Davito, Robert C. Fitch, B. Bayraktaroglu, R. Neidhard, L. Kehias, R. Scherer, M.P. Mack |
| Rok vydání: |
1993 |
| Předmět: |
|
| Zdroj: |
Electronics Letters. 29:1068 |
| ISSN: |
0013-5194 |
| DOI: |
10.1049/el:19930713 |
| Popis: |
The first high power demonstration of an InGaP/GaAs heterojunction bipolar transistor is presented. Multifinger selfaligned HBTs were tested at 3 GHz. A maximum output power of 2.82 W CW was obtained for a 600 μm2 emitter area device (4.7 mW/μm2 power density) with an attendant gain of 6.92 dB; simultaneously, the device exhibited 55.2% power added efficiency, 69.1% collector efficiency and 8.0 × 104 A/cm2 emitter current density. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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