Selective growth of Ge1−xSnxepitaxial layer on patterned SiO2/Si substrate by metal–organic chemical vapor deposition
| Autor: | Osamu Nakatsuka, Shigeaki Zaima, Tomoya Washizu, Wakana Takeuchi, Shinichi Ike |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Decomposition Metal Si substrate chemistry visual_art 0103 physical sciences visual_art.visual_art_medium Total pressure 0210 nano-technology Tin Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 57:01AC05 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We have investigated the selective growth of a Ge1− x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal–organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1− x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1− x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1− x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1− x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1− x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors. |
| Databáze: | OpenAIRE |
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