Spectroscopy of electroreflection, the electron band structure, and the mechanism of visible photoluminescence of anisotropically etched silicon

Autor:	T.Ya. Gorbach, E. F. Venger, L. A. Matveeva, S. V. Svechnikov
Rok vydání:	1999
Předmět:	Auger electron spectroscopy Materials science Silicon Band gap business.industry General Physics and Astronomy chemistry.chemical_element Electron hole Molecular physics Semiconductor chemistry Electron diffraction Optoelectronics Direct and indirect band gaps Electronic band structure business
Zdroj:	Journal of Experimental and Theoretical Physics. 89:948-954
ISSN:	1090-6509 1063-7761
DOI:	10.1134/1.558936
Popis:	We present the results of studies of electroreflection in the 1.1–4.4 eV spectral range, of electron Auger spectroscopy, and of electron diffraction involving the photoluminescent Si-SiO2 system prepared via anisotropic chemical etching of the Si(100) surface. These results are explained on the basis of a four-layer model of the band structure and energy transition diagram for a system with a quantum well at the silicon surface, surface electron states at the boundary, and a gradient of the band potential in the transition layer. We find that light-emitting silicon remains an indirect-gap semiconductor and that the visible photoluminescence is due to direct recombinations of the light-excited electrons and holes in the quantum well at the center of the Brillouin zone with the participation of the band of deep localized states, which is due to the presence of oxygen at the silicon surface.
Databáze:	OpenAIRE
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