| Popis: |
Thin films of binary SiO 2 based mixed oxides are finding increasing use in the fabrication of silicon discrete devices and integrated circuits. The mechanical and chemical properties of these glasses, and thus their use in the fabrication of any specific device structure, is quite dependent upon composition. We have developed an infrared method for determining the composition of glasses in the (a) B 2 O 3 -SiO 2 system over the range 0–100% B 2 O 3 , (b) As 2 O 3 -SiO 2 system over the range 0–20% As 2 O 3 , and (c) P 2 O 5 -SiO 2 system over the range 0–20% P 2 O 5 . This technique is non-destructive and may be used to unambiguously characterize films in the 1000–10000 A, range such as are commonly used in device manufacture. The use of these glasses as sources for diffusion of dopants into silicon has been extensively studied, and results will be given. In addition, the infrared vibrational spectra for the borosilicate system has been studied in detail allowing insights into the character of the bonding in these vapor-deposited glassy solids. |
