Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm

Autor:	T. Mollenhauer, Thorsten Wahlbrink, Heinrich Kurz, Max C. Lemme, Michael Schmidt, J. K. Efavi, H. D. B. Gottlob, Tim Echtermeyer
Rok vydání:	2006
Předmět:	Materials science business.industry Mechanical Engineering Oxide Dielectric Condensed Matter Physics Epitaxy Capacitance chemistry.chemical_compound chemistry Mechanics of Materials Electrode Optoelectronics General Materials Science business Metal gate Current density High-κ dielectric
Zdroj:	Materials Science in Semiconductor Processing. 9:904-908
ISSN:	1369-8001
Popis:	Novel gate stacks with epitaxial gadoliniurn oxide (Gd(2)O(3)) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densi ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cf8378e9aeb8ea37c48c2d0cd5d7b837 https://doi.org/10.1016/j.mssp.2006.10.007 Zobrazit plný text záznamu Full Text from ScienceDirect