1.3-um InAs/GaAs quantum-dot lasers monolithically grown on Ge substrate
| Autor: | F Pozzi, Frank Tutu, Huiyun Liu, Ting Wang, Alwyn J. Seeds |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Laser diode business.industry Physics::Optics Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Quantum dot laser law Optoelectronics business Lasing threshold Light-emitting diode Diode |
| Zdroj: | 8th IEEE International Conference on Group IV Photonics. |
| Popis: | The realization of semiconductor laser diodes and light-emitting diodes on Si substrates would permit the creation of complex optoelectronic circuits for the first time, enabling chip-to-chip and system-to-system optical communications. Direct epitaxial growth of III-V semiconductor materials on Si or Ge is one of the most promising candidates1 for fabricating electrically pumped light sources on a Si platform. Here, we describe the first quantum-dot laser diode to be realized on a Ge substrate. To fabricate the laser, a single-domain GaAs buffer layer2 was first grown on the Ge substrate using the Ga prelayer technique. A long-wavelength InAs/GaAs quantum-dot structure was then fabricated on the high-quality GaAs buffer layer. Lasing at a wavelength of 1305 nm with the extremely low threshold current density of 55.2 A/cm2 was observed under continuous-wave (CW) current drive at room temperature |
| Databáze: | OpenAIRE |
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