Equilibration temperature of a-Si:H and a-Ge:H from Raman measurements

Autor:	Gottfried H. Bauer, R. Zedlitz, Markus B. Schubert, H.-D. Mohring
Rok vydání:	1991
Předmět:	Materials science Analytical chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials Deposition temperature symbols.namesake Molecular geometry Raman band Materials Chemistry Ceramics and Composites symbols Spectroscopy Raman spectroscopy Deposition (law)
Zdroj:	Journal of Non-Crystalline Solids. :195-198
ISSN:	0022-3093
DOI:	10.1016/s0022-3093(05)80089-4
Popis:	Structural changes have been studied as a function of deposition temperature Ts in intrinsic a-Si:H and a-Ge:H. Bond angle disorder as indicated by the halfwidth of the transverse optic (TO) like Raman band is minimized at Ts ≈ 500K in a-Ge:H from different deposition methods, whereas in a-Si:H this ‘structural equilibration temperature’ is strongly dependent on growth conditions. Minimum disorder is found at Ts ≈ 460K in optimum quality a-Si:H, but occurs at Ts ≈ 550K in a-Si:H films from a 90 MHz discharge. Moreover Urbach energy and defect density from Photothermal Deflection Spectroscopy show a minimum at Ts ≈ 550K for all a-Si:H samples.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cf6fd1ac648cea129b0413bedacd6a3e https://doi.org/10.1016/s0022-3093(05)80089-4 Zobrazit plný text záznamu