Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor
| Autor: | Abdelilah Slaoui, D. Angermeier, J.C. Muller, R. Monna |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Supersaturation
Silicon Renewable Energy Sustainability and the Environment chemistry.chemical_element Partial pressure Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering Trichlorosilane Materials Chemistry Electrochemistry Fluid dynamics Physical chemistry Deposition (phase transition) Wafer |
| Zdroj: | Journal of The Electrochemical Society. 144:3256-3261 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1837993 |
| Popis: | The growth of epitaxial Si on (100)‐oriented Si wafers in a horizontal rapid thermal chemical vapor deposition (RTCVD) reactor has been investigated. Trichlorosilane was employed as a precursor diluted in carrier gas at 1 atm reactor pressure. The growth rates in dependence of the deposition uniformity, the input partial pressure of the precursor, and the fluid dynamics were analyzed by a three‐dimensional numerical simulation. Good agreement between predicted and measured growth rates were found. Moreover, the experimental growth rates under mass transport limitation were discussed in terms of gas‐phase supersaturation and its impact on the surface morphology. Finally, it is demonstrated that hydrodynamic effects in the RTCVD reactor influence strongly the Si growth in the delivery rate limited regime. |
| Databáze: | OpenAIRE |
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