Autor: |
Klaus Dr. Wiesinger, E. Glenz, A. Preussger, W.M. Werner, W. Schwetlick, K. Heift, K. Malek |
Rok vydání: |
2002 |
Předmět: |
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Zdroj: |
[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs. |
DOI: |
10.1109/ispsd.1991.146097 |
Popis: |
Describes a novel smart power technology (SPT) which integrates n-channel (DMOS) power transistors for multichannel applications, p-channel high voltage transistors, and CMOS logic and bipolar devices. The DMOS was optimized with respect to minimal R/sub on/ (on-resistance) and breakdown voltage greater than 75 V. With a self-aligned DMOS contact cell a specific R/sub on/ of 0.28 Omega -mm/sup 2/ without metal contribution was reached. > |
Databáze: |
OpenAIRE |
Externí odkaz: |
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