SPT-a new smart power technology with a fully self aligned DMOS cell

Autor: Klaus Dr. Wiesinger, E. Glenz, A. Preussger, W.M. Werner, W. Schwetlick, K. Heift, K. Malek
Rok vydání: 2002
Předmět:
Zdroj: [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.
DOI: 10.1109/ispsd.1991.146097
Popis: Describes a novel smart power technology (SPT) which integrates n-channel (DMOS) power transistors for multichannel applications, p-channel high voltage transistors, and CMOS logic and bipolar devices. The DMOS was optimized with respect to minimal R/sub on/ (on-resistance) and breakdown voltage greater than 75 V. With a self-aligned DMOS contact cell a specific R/sub on/ of 0.28 Omega -mm/sup 2/ without metal contribution was reached. >
Databáze: OpenAIRE