Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence
| Autor: | Yuji Zhao, Houqiang Fu, Shuji Nakamura, Zhijian Lu, Yong-Hang Zhang, Steven P. DenBaars, Xin-Hao Zhao |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science business.industry Bar (music) chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention Charge-carrier density chemistry law 0103 physical sciences Radiative transfer Optoelectronics Voltage droop Electrical and Electronic Engineering 0210 nano-technology business Indium Diode Light-emitting diode |
| Zdroj: | Journal of Display Technology. 12:736-741 |
| ISSN: | 1558-9323 1551-319X |
| Popis: | The superior low-efficiency droop performance of semipolar ( $20\bar{2}\bar{1}$ ) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar ( $20\bar{2}\bar{1}$ ) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar ( $20\bar{2}\bar{1}$ ) InGaN QWs compared with those on the $c$ -plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar ( $20\bar{2}\bar{1}$ ) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar ( $20\bar{2}\bar{1}$ ) LEDs. |
| Databáze: | OpenAIRE |
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