Localization of Upper-Valley Electrons in a Narrow-Bandgap Channel: a Possible Additional Mechanism of Current Increase in DA–DpHEMT
| Autor: | A. B. Pashkovskii, S. A. Bogdanov |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Drift velocity Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Band gap Doping Transistor Heterojunction 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Condensed Matter::Materials Science law 0103 physical sciences Current (fluid) 0210 nano-technology Communication channel |
| Zdroj: | Technical Physics Letters. 45:1020-1023 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | The influence of the localization of upper-valley electrons in a narrow-bandgap channel on the drift velocity burst in AlxGa1 –xAs–GaAs transistor heterostructures with double-sided doping has been theoretically estimated. It is established that the fraction of electrons passing in this case from the narrow-bandgap channel to wide-bandgap material is smaller than in the usual structures, which can lead in some cases to an increase in the electron drift velocity by up to 15%. This phenomenon can provide an additional mechanism of current increase in transistors based on heterostructures with donor–acceptor doping. |
| Databáze: | OpenAIRE |
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