Design of CMOS Device Process Sensor in 28 nm FD-SOI with 2 % of Frequency Spread

Autor: Gowtham Peringattu Kalarikkal, Rohit Goel, Hitesh Shrimali
Rok vydání: 2021
Zdroj: 2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS).
DOI: 10.1109/icecs53924.2021.9665465
Databáze: OpenAIRE