Tight-binding description of graphene–BCN–graphene layered semiconductors
| Autor: | Mahsa Ebrahimi, Ashkan Horri, Majid Sanaeepur, Mohammad Bagher Tavakoli |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Graphene Tunneling field effect transistor 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor Tight binding law Modeling and Simulation 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Nanoscopic scale Quantum tunnelling |
| Zdroj: | Journal of Computational Electronics. 19:62-69 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-019-01442-z |
| Popis: | Based on density functional calculations, tight-binding models are proposed for few layers of three BCN allotropes sandwiched between two layers of graphene. The results pave the road toward investigation of the performance of novel nanoelectronic devices such as vertical tunneling field effect transistors and nanoscale sensors operating on the basis of quantum tunneling through these layered materials-based systems. |
| Databáze: | OpenAIRE |
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