p-GaSe-n-Ga2S3 heterojunctions
| Autor: | V. I. Vitkovskaya, M. Z. Kovalyuk, M. V. Tovarnitskii |
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| Rok vydání: | 1997 |
| Předmět: | |
| Zdroj: | Technical Physics Letters. 23:385-385 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/1.1261689 |
| Popis: | Epitaxial layers of n-Ga2S3 have been grown on p-GaSe single crystals annealed in sulfur vapor. The possibility of fabricating p-GaSe-n-Ga2S3 heterojunctions is demonstrated. |
| Databáze: | OpenAIRE |
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