Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric

Autor:	Walter Riess, Kirsten E. Moselund, Heike Riel, Mikael Björk, Emanuel Lörtscher, H. Ghoneim, Siegfried Karg, Heinz Schmid
Rok vydání:	2011
Předmět:	Materials science business.industry Gate dielectric Nanowire Nanotechnology Semiconductor device Dielectric Subthreshold slope Electronic Optical and Magnetic Materials Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Ohmic contact High-κ dielectric
Zdroj:	IEEE Transactions on Electron Devices. 58:2911-2916
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2011.2159797
Popis:	In this paper, we demonstrate p-channel tunnel FETs based on silicon nanowires grown with an in situ p-i-n doping profile. The tunnel FETs were fabricated with three different gate dielectrics, SiO2, Al2O3, and HfO2, and show a performance enhancement when using high-k dielectric materials. The best performance is achieved for the devices using HfO2 as the gate dielectric, which reach an Ion of 0.1 μA/μm (VDS = -0.5 V, VGS = -2 V), combined with an average inverse subthreshold slope (SS) of ~ 120 mV/dec and an Ion/Ioff ratio of around 106. For the tunnel FETs with Al2O3 as the gate dielectric, different annealing steps were evaluated, and an activation anneal at only 700°C was found to yield the best results. Furthermore, we also investigated the temperature behavior of the tunnel FETs. Ideal tunnel FET behavior was observed for devices having ohmic Ni/Au contacts, and we demonstrate the invariance of both the SS and on-current with temperature, as expected for true tunnel FETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cf475a8d374e0c73a3237fb8bc4af24b https://doi.org/10.1109/ted.2011.2159797 Zobrazit plný text záznamu