The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation

Autor:	Robert M. Shelby, Kota V. R. M. Murali, Kailash Gopalakrishnan, J. Mohammad, Charles T. Rettner, Geoffrey W. Burr, B. N. Kurdi, Pritish Narayanan, A. K. Deb, Alvaro Padilla, Donald S. Bethune, R. S. Shenoy, Karthik V. Raman, Mohit Bajaj, Rajan K. Pandey, Kumar Virwani
Rok vydání:	2014
Předmět:	Materials science Condensed matter physics business.industry Band gap Electrode Electrical engineering Ionic bonding Thermal conduction business Voltage Exponential function Leakage (electronics) Ion
Zdroj:	72nd Device Research Conference.
Popis:	Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultra-low leakage, and high ON current densities exhibited by BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-5]. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect-ratio, thickness, and device CD.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cf28e963d9431aff402cfc7e06b8e309 https://doi.org/10.1109/drc.2014.6872348 Zobrazit plný text záznamu