Thermal stability study of TiN/TiSi2diffusion barrier between Cu andn+Si
| Autor: | Fon-Shan Huang, Jenn-Chang Hwang, Tzong-Sheng Chang, Lih-Ping Wang, Wen-Chun Wang |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 75:7847-7851 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.356568 |
| Popis: | The failure mechanism of the TiN/TiSi2 bilayers as diffusion barriers between Cu and n+Si was investigated. The TiN/TiSi2 bilayers were formed by either annealing Ti (50 nm)/n+Si via various rapid thermal processes or reactively sputtering TiN (50 nm) on TiSi2. The degradation study of the Cu/TiN/TiSi2/n+Si contact system was undertaken by scanning electron microscopy, cross‐section transmission electron microscopy (XTEM), secondary‐ion‐mass spectrometry (SIMS), and diode leakage current and contact resistance measurements. Leakage current measurements indicated no deterioration of n+‐p diode junctions up to 475 °C for 30 min in a N2 ambient. For the sintering temperature at 500 °C, the leakage current increased abruptly and SIMS profiles revealed a large amount of Cu atoms diffusing into the junctions of n+‐p diodes. XTEM showed that the small pyramidal‐shaped Cu3Si crystallite (with a size 0.25 μm) precipitated in the n+Si substrate. The formation of Cu3Si increased the occupied volume, then generated t... |
| Databáze: | OpenAIRE |
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