Nanoscale shielded channel dual gate stack silicon on nothing junctionless transistor for improving short channel effect and analog performance

Autor:	Shailaja C. Patil, S. C. Wagaj
Rok vydání:	2019
Předmět:	Materials science Silicon Computer Networks and Communications chemistry.chemical_element Short-channel effect Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Dual gate law.invention Stack (abstract data type) law Shielded cable Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Instrumentation Nanoscopic scale business.industry 020208 electrical & electronic engineering Transistor 020206 networking & telecommunications Electronic Optical and Magnetic Materials chemistry Optoelectronics business Hardware_LOGICDESIGN Communication channel
Zdroj:	International Journal of Electronics Letters. 8:97-114
ISSN:	2168-1732 2168-1724
DOI:	10.1080/21681724.2019.1570552
Popis:	A nanoscale shielded channel dual gate stack silicon on nothing junctionless transistor (SCDGSSONJLT) is proposed in this paper. The simulation results are compared with single material gat...
Databáze:	OpenAIRE
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