Attenuation length of photoelectrons in thin films of SiO2 grown on Si

Autor:	G Forgács, G Aszódi, M Németh-Sallay, J Peisner
Rok vydání:	1976
Předmět:	Materials science Carbon film business.industry Materials Chemistry Metals and Alloys Attenuation length Optoelectronics Surfaces and Interfaces Thin film Photoelectric effect business Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Thin Solid Films. 36:251-255
ISSN:	0040-6090
DOI:	10.1016/0040-6090(76)90452-1
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cf093239b3c2c35c6a54f445e6c96910 https://doi.org/10.1016/0040-6090(76)90452-1 Zobrazit plný text záznamu