Prediction of Wire Wear, Wire Bow and Wafer Total Thickness Variation in the Diamond Wire Wafering Process
| Autor: | Sunder, K., Uhle, H., Knöppel, S., Anspach, O. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-2bv.3.50 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 1491-1495 The optimal usage of costly but also high-performing diamond wire in the wafering process necessitates a regular back-and-forth of the wire web with a small fresh wire supply per cycle (pilgrim mode) instead of unidirectional movement as in the slurry-based process. This leads to a strong non-uniform wear of the diamond wire across the wire web. In this work the wear of diamond wire is described in terms of decrease in diamond density. It is shown that the wear of diamond wire correlates with the silicon length each segment of wire was in contact with. Due to the complexity of the pilgrim mode and common sawing profiles these silicon contact lengths are calculated by iteration. On the basis of several diamond wire cuts correlations between the silicon contact lengths and the wire bow as well as the total thickness variation (TTV) of the wafers were found. These results enable on the one hand the quantitative prediction of wire wear, wire bow and wafer TTV of further cuts with the diamond wire used in this study. On the other hand they point to conditions in the sawing process which improve or worsen wire bow and wafer TTV. |
| Databáze: | OpenAIRE |
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