Stress relaxation at forming GaSe–Si(111) interfaces
| Autor: | M. Eddrief, K Amimer, C.A. Sébenne |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Reflection high-energy electron diffraction
Chemistry Photoemission spectroscopy Analytical chemistry Heterojunction Substrate (electronics) Condensed Matter Physics Epitaxy Inorganic Chemistry Crystallography Lattice constant X-ray photoelectron spectroscopy Electron diffraction Materials Chemistry |
| Zdroj: | Journal of Crystal Growth. 217:371-377 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(00)00533-9 |
| Popis: | The molecular beam epitaxial growth of a film of the layered semiconductor GaSe onto a near perfect, hydrogenated, 1×1 ordered Si(1 1 1) substrate has been monitored at its initial steps by reflection high-energy electron diffraction at grazing incidence (RHEED) and checked in situ by X-ray photoemission spectroscopy (XPS). The changes in surface lattice parameter and in core level peak areas as a function of the thickness of the deposited film, within the first two layers, are explained as follows: (i) the single atomic planes of Ga (bound to Si) and Se (above Ga), which substitute H to passivate the Si(1 1 1) surface are exact monolayers and keep the same perfect 1×1 structure of the Si substrate, (ii) the epitaxial growth of GaSe is strictly a layer-by-layer process and (iii) the lattice mismatch between the passivated substrate and the crystalline GaSe film is fully absorbed within the first elementary “Ga 2 Se 2 ” layer through an original relaxation process. |
| Databáze: | OpenAIRE |
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