Growth rate of yttria-stabilized zirconia thin films formed by electrochemical vapour-deposition using NiO as an oxygen source

Autor:	Atsushi Mineshige, Kenji Kikuchi, Zempachi Ogumi, Tomoyuki Maeda, Shinji Nakanishi, Tsutomu Ioroi, Minoru Inaba, Akimasa Tasaka, Tadayoshi Takahashi
Rok vydání:	1997
Předmět:	Materials science Non-blocking I/O Inorganic chemistry Substrate (chemistry) chemistry.chemical_element General Chemistry Condensed Matter Physics Oxygen Chemical engineering chemistry General Materials Science Cubic zirconia Growth rate Thin film Porosity Yttria-stabilized zirconia
Zdroj:	Solid State Ionics. 104:303-310
ISSN:	0167-2738
Popis:	Yttria-stabilized zirconia (YSZ) thin films were formed at 1000°C by a modified electrochemical vapour-deposition (EVD) using NiO as an oxygen source, and ZrCl4 and YCl3 as metal sources. Growth rate kinetics were examined using NiO pellet substrates with different pore structures. The thickness of YSZ film increased linearly with deposition time, and the growth rate increased with increasing the porosity of the substrate. The pore size as well as the porosity affected the growth rate. In addition, the observed growth rate was much slower than the theoretical one assuming that the electrochemical transportation of the charged species across the growing film is rate limiting. From these results, it was concluded that the rate-determining step is not the bulk electrochemical transport, but the mass transport of dissociated oxygen in the substrate pore.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cef818d20afc893aa71520a59105e376 https://doi.org/10.1016/s0167-2738(97)00420-7 Zobrazit plný text záznamu Full Text from ScienceDirect