Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)

Autor: Nonna V. Zotova, B. A. Matveev, G. N. Talalakin, M. A. Remennyi, N. M. Stus, M. Aidaraliev, S. A. Karandashev, T. Beyer, R. Brunner
Rok vydání: 2000
Předmět:
Zdroj: Semiconductors. 34:488-492
ISSN: 1090-6479
1063-7826
Popis: It is shown that an increase in the internal losses beyond the lasing threshold in the lasers based on InGaAsSb/InAsSbP double heterostructures (wavelength range λ=3.0–3.6 µm, temperature T=77 K) causes the current-related shift of the laser mode to shorter wavelengths. This shift is as large as 80 cm−1/A and can explain the broadening of the laser line from 5 to 7 MGz as the pump current increases.
Databáze: OpenAIRE