Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)
Autor: | Nonna V. Zotova, B. A. Matveev, G. N. Talalakin, M. A. Remennyi, N. M. Stus, M. Aidaraliev, S. A. Karandashev, T. Beyer, R. Brunner |
---|---|
Rok vydání: | 2000 |
Předmět: | |
Zdroj: | Semiconductors. 34:488-492 |
ISSN: | 1090-6479 1063-7826 |
Popis: | It is shown that an increase in the internal losses beyond the lasing threshold in the lasers based on InGaAsSb/InAsSbP double heterostructures (wavelength range λ=3.0–3.6 µm, temperature T=77 K) causes the current-related shift of the laser mode to shorter wavelengths. This shift is as large as 80 cm−1/A and can explain the broadening of the laser line from 5 to 7 MGz as the pump current increases. |
Databáze: | OpenAIRE |
Externí odkaz: |