Threshold conditions for an ultraviolet wavelength GaN quantum-well laser
| Autor: | W.W. Chow, A. Girndt, Mary H. Crawford, S.W. Koch |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Heterojunction Laser medicine.disease_cause Molecular physics Atomic and Molecular Physics and Optics law.invention Semiconductor laser theory Wavelength law medicine Optoelectronics Spontaneous emission Quantum well laser Electrical and Electronic Engineering business Current density Ultraviolet |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 4:514-519 |
| ISSN: | 1077-260X |
| DOI: | 10.1109/2944.704111 |
| Popis: | This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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