Autor: |
Michael J. Wargo, X.Z. Cao, D. J. Carlson, August F. Witt |
Rok vydání: |
1991 |
Předmět: |
|
Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
Popis: |
Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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