New optical approaches to the quantitative characterization of crystal growth, segregation, and defect formation

Autor:	Michael J. Wargo, X.Z. Cao, D. J. Carlson, August F. Witt
Rok vydání:	1991
Předmět:	Contrast enhancement Materials science business.industry Near-infrared spectroscopy Crystal growth Characterization (materials science) Gallium arsenide chemistry.chemical_compound Optics chemistry Microscopy Compound semiconductor Statistical analysis business
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
Popis:	Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cee894c587ca14fee8d27bbd324ba150 https://doi.org/10.1117/12.49592 Zobrazit plný text záznamu