| Autor: |
Tsung-Yen Liu, Rui-Sen Liu, Chieh-Hsiung Kuan, Mu-Jen Lai, Shih-Ming Huang, Lin Ray-Ming |
| Rok vydání: |
2021 |
| Předmět: |
|
| DOI: |
10.21203/rs.3.rs-680585/v1 |
| Popis: |
In this study we suppressed the parasitic emission caused by electron overflow found in typical UVB light-emitting diodes (LEDs). Furthermore, modulation of the p-layer structure and doping profile allowed us to decrease the relaxation time of the holes to reach conditions of quasi-charge neutrality in the UVB quantum well. Our UVB LED (sample A) exhibited a clear exciton emission, with its peak near 306 nm and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of a thermal energy effect. At temperatures of up to 363 K, sample A displayed the exciton emission. Our corresponding UVC LED (sample B) exhibited only a Gaussian peak emission at a wavelength of approximately 272 nm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
