A low temperature fabrication of HfO2 films with supercritical CO2 fluid treatment

Autor:	Chi Feng Weng, Po-Tsun Liu, Ting-Chang Chang, Chih Tsung Tsai, Po-Yu Yang, Kon Tsu Kin, Fon Shan Huang
Rok vydání:	2008
Předmět:	chemistry.chemical_compound Materials science chemistry Sputtering Oxide General Physics and Astronomy Equivalent oxide thickness Wafer Dielectric Sputter deposition Thin film Composite material Supercritical fluid
Zdroj:	Journal of Applied Physics. 103:074108
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.2844496
Popis:	To improve the dielectric properties of sputter-deposited hafnium oxide (HfO2) films, the supercritical CO2 (SCCO2) fluid technology is introduced as a low temperature treatment. The ultrathin HfO2 films were deposited on p-type (100) silicon wafer by dc sputtering at room temperature and subsequently treated with SCCO2 fluids at 150°C to diminish the traps in the HfO2 films. After SCCO2 treatment, the interfacial parasitic oxide between the Si substrate and HfO2 layer is only about 5A, and the oxygen content of the HfO2 films apparently increased. From current-voltage (I-V) and capacitance-voltage (C-V) measurements, the leakage current density of the SCCO2-treated HfO2 films is repressed from 10−2to10−7A∕cm2 at electric field=3MV∕cm due to the reduction of traps in the HfO2 films. The equivalent oxide thickness also obviously decreased. Besides, the efficiency of terminating traps is relative to the pressure of the SCCO2 fluids.
Databáze:	OpenAIRE
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