Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates

Autor:	Marcin Zielinski, Sylvie Contreras, Yves Monteil, Caroline Blanc, Veronique Soulière, Jean Camassel, Sandrine Juillaguet, C. Sartel
Rok vydání:	2005
Předmět:	Low temperature photoluminescence Materials science Photoluminescence Mechanical Engineering Doping Analytical chemistry chemistry.chemical_element Nanotechnology Condensed Matter Physics Epitaxy Nitrogen chemistry Mechanics of Materials Aluminium Hall effect General Materials Science P type doping
Zdroj:	Materials Science Forum. :117-120
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.483-485.117
Popis:	We report an experimental investigation of the residual (n-type) and intentional (p-type) doping level of epitaxial layers grown on a-cut 4H-SiC substrates. Using SIMS, C(V) measurements, low temperature photoluminescence and Hall effect investigations, we show that nitrogen incorporates 3 times more than usually found for surfaces. Conversely, aluminum incorporates 8 times less. Altogether, this is in excellent agreement with previous results from stepcontrolled epitaxy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ced240bf5a2521a72e180aed6fe9b9a9 https://doi.org/10.4028/www.scientific.net/msf.483-485.117 Zobrazit plný text záznamu