Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field
| Autor: | Ri. Betancourt-Riera, L. Ferrer-Galindo, Re. Betancourt-Riera, Raúl Riera |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Physics business.industry 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Electronic Optical and Magnetic Materials symbols.namesake Semiconductor Electric field 0103 physical sciences symbols Emission spectrum Electrical and Electronic Engineering Double quantum 0210 nano-technology business Raman scattering Quantum well S-matrix |
| Zdroj: | Physica B: Condensed Matter. 545:215-221 |
| ISSN: | 0921-4526 |
| Popis: | In this paper studies an electron Raman scattering process for a semiconductor, coupled and asymmetrical double quantum well. Then, the presence of an electron in a single conduction band is considered. In addition, the system is subjected to an external electric field. To carry out this study, the net Raman gain and the differential cross section are calculated. The emission spectra are interpreted and discussed. For this, we obtain the exact solutions of the electron states considering the envelope function approximation and a single parabolic conduction band, which is split into a sub-bands system due to confinement. Furthermore, the effect of the electric field on the electron states and in the differential cross section is studied. To illustrate our findings, we have considered a system growing in a G a A s / A l x G a 1 − x A s matrix. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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