Stripe formation and disorder induced stripe fragmentation
Autor: | Yvan Bruynseraede, Lieven Trappeniers, Victor Moshchalkov, Patrick Wagner, Gerd Teniers, Johan Vanacken |
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Rok vydání: | 2000 |
Předmět: |
Superconductivity
Materials science Condensed matter physics Scattering Energy Engineering and Power Technology Condensed Matter Physics Electronic Optical and Magnetic Materials Weak localization Charge ordering Electrical resistivity and conductivity Condensed Matter::Superconductivity Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering Metal–insulator transition Scaling Phase diagram |
Zdroj: | Physica C: Superconductivity. :1799-1802 |
ISSN: | 0921-4534 |
DOI: | 10.1016/s0921-4534(00)01087-x |
Popis: | We have analyzed the zero field and high field transport properties of several underdoped high-Tc systems. A convincing scaling behavior of the temperature dependence of the resistivity has been found for all of them, thus proving that the underlying scattering mechanism remains the same as we approach the metal-insulator transition from the metallic side. The scaling temperature Δ grows substantially with the decreasing hole concentration x. We associate Δ with the opening of the spin-gap in the spin ladders appearing due to the stripe formation. Three distinctly different temperature regimes have been identified: (i) high-temperature Heisenberg-like 2D regime; (ii) intermediate temperature 1D stripe regimes: and (iii) low-temperature disorder-induced stripe fragmentation and pinning with an enhanced inter-fragment and inter-stripe hole hopping, which recovers an effective 2D weak localization with a logarithmic behavior of resistivity with temperature. This third regime has been revealed by suppressing superconductivity in fields up to 60 T. Hall conductivity data are used to estimate the evolution of the stripe “order parameter” and mobility with temperature in the normal state. |
Databáze: | OpenAIRE |
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