| Autor: |
Shi Yang Ji, Jung Hun Choi, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka, P.Suresh Kumar |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
Key Engineering Materials. 508:193-198 |
| ISSN: |
1662-9795 |
| DOI: |
10.4028/www.scientific.net/kem.508.193 |
| Popis: |
The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Increased to 13% which Is Higher than the Sample without Nitridation with 7%. Also, Flat Surface Was Observed in the Nitrided Sample. Two Times Larger in-Plane Strain Was Induced at the Nitired Sample. Ingan Grown on Low-Temperature Gan Buffer, however, Did Not Show Clear Effect of Nitridation. The Two Investigated Samples Showed Similar Indium Composition, Surface Flatness, and in-Plane Strain with and without Nitridation. Differences of Indium Incorporation and Relaxation of in-Plane Strain Were Attributed to the Effect of AIN Formed by Nitridation Process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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