Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes

Autor:	T. D. Osentowski, John Dallesasse, C. P. Kuo, A. R. Sugg, M. G. Craford, Nick Holonyak, Robert M Fletcher, S. J. Caracci, F. A. Kish
Rok vydání:	1991
Předmět:	Materials science Physics and Astronomy (miscellaneous) Band gap Scanning electron microscope business.industry Inorganic chemistry Oxide Heterojunction Chemical vapor deposition Laser law.invention chemistry.chemical_compound chemistry law Optoelectronics business Quantum well Diode
Zdroj:	Applied Physics Letters. 59:354-356
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.105593
Popis:	Data are presented demonstrating the formation of stable, device‐quality native oxides from high Al composition In0.5(AlxGa1−x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500 °C). The oxide exhibits excellent current‐blocking characteristics and is employed to fabricate continuous room‐temperature stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P double‐heterostructure laser diodes.
Databáze:	OpenAIRE
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