Sulfide pretreatment effects of liquid phase deposited TiO2 on AlGaAs and its application
| Autor: | Tai Lung Lee, Kuan Wei Lee, Yong Jie Zou, Yeong-Her Wang, Jung Sheng Huang |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
chemistry.chemical_classification
Materials science Sulfide Transistor Analytical chemistry chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Gallium arsenide law.invention chemistry.chemical_compound chemistry Aluminium law Electric field Titanium dioxide Surface roughness Instrumentation Deposition (law) |
| Zdroj: | Vacuum. 118:100-103 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2014.11.020 |
| Popis: | The study explored titanium dioxide (TiO 2 ) prepared by liquid phase deposition (LPD) deposited on (NH 4 ) 2 S x -treated aluminum gallium arsenide (AlGaAs), including the surface roughness by using atomic force microscopy (AFM) measurements and electrical properties. The leakage current density of MOS capacitor is approximately 6.83 × 10 −7 A/cm 2 at zero electric field for the sample without any pretreatment. The interface trap density ( D it ) and the flat-band voltage shift (Δ V FB ) are 4.46 × 10 12 cm −2 eV −1 and 3.6 V, respectively. After the 10 min 5% (NH 4 ) 2 S x pretreatment, the leakage current density, D it , and Δ V FB can be improved to 1.04 × 10 −7 A/cm 2 at zero electric field, 2.28 × 10 12 cm −2 eV −1 , and 2 V, respectively. The paper also demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using LPD-TiO 2 after 10 min sulfide pretreatment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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