Pulsed laser annealing of ion implanted silicon

Autor:	B. J. Smith, N. G. Blamires, J. Stephen
Rok vydání:	1979
Předmět:	inorganic chemicals Materials science Silicon Silicon dioxide Annealing (metallurgy) technology industry and agriculture Oxide Analytical chemistry Nanocrystalline silicon chemistry.chemical_element Laser law.invention chemistry.chemical_compound Ion implantation chemistry law Wafer
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.31679
Popis:	The application of laser annealing to ion implanted silicon wafers in device fabrication has been investigated. Boron and arsenic have been implanted through thin layers of silicon dioxide and also into bare silicon. Annealing has been carried out by the pulsed laser technique both through the oxide and into the bare areas. Laser irradiation of thick oxides (∠μ) has also been carried out.Observations by phase contrast microscopy and scanning electron microscopy (EBIC mode) show a fine structure of defects both in the silicon and the oxide. The optical contrast of these layers is enhanced by the presence of the thin oxide. The origin of the defects has been investigated.Electrical measurements of device properties show the presence of recombination‐generation centres. The concentration of these centres is related to the energy of the laser irradiation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce9b0e940a275b1cc652ec4b240f2496 https://doi.org/10.1063/1.31679 Zobrazit plný text záznamu