Laser processing of amorphous silicon for large-area polysilicon imagers
| Autor: | R. A. Street, J. B. Boyce, R. T. Fulks, JengPing Lu, Y. Wang, Ping Mei, R. Lau, K. Van Schuylenbergh, Jackson Ho |
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| Rok vydání: | 2001 |
| Předmět: |
Amorphous silicon
Fabrication Materials science business.industry Polysilicon depletion effect Transistor Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Amorphous solid chemistry.chemical_compound Optics chemistry Thin-film transistor law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics business Laser processing Leakage (electronics) |
| Zdroj: | Thin Solid Films. 383:137-142 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(00)01585-6 |
| Popis: | Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows for the fabrication of high-quality polysilicon materials and thin-film transistors (TFTs). Under optimized processing conditions, these polysilicon TFTs have high mobilities, sharp turn-on, low off-state leakage currents and good spatial uniformity. These improved parameters, particularly the low off-state leakage currents and good uniformity, enable, not only displays, but also the more demanding flat-panel imaging arrays to be fabricated in polysilicon, and results on an imager are presented. |
| Databáze: | OpenAIRE |
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