Photostructural changes in amorphous semiconductors studied by the modulated photocurrent method

Autor:	E. Mytilineou, P. Kounavis
Rok vydání:	1999
Předmět:	Photocurrent Amorphous semiconductors Glow discharge Chemistry business.industry Mineralogy Condensed Matter Physics Free carrier Degradation (geology) Optoelectronics General Materials Science business Order of magnitude Light exposure
Zdroj:	Journal of Physics: Condensed Matter. 11:9105-9114
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/11/46/312
Popis:	The optical bias dependence of the modulated photocurrent (OBMPC) is used to study the light-induced changes of sputtered a-As2Se3 and glow discharge a-Si:H films. It is found that upon strong light exposure, an increase, by an order of magnitude, in the ratio of the capture coefficient of the majority carriers by the gap states, over the free carrier mobility, c/µ, is taking place in both materials. This is interpreted as a result of the structural modifications that may take place during the light degradation enhancing the capture coefficient. The effect is completely reversible upon thermal annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce95df68fae5d28a435fc59658697a8e https://doi.org/10.1088/0953-8984/11/46/312 Zobrazit plný text záznamu