Sidewall roughness control in deep reactive ion etch process for micromachined Si devices

Autor:	T. M. F. Amin, M. Q. Huda, Wolfgang Jäger, John Tulip
Rok vydání:	2012
Předmět:	Materials science Silicon Passivation business.industry Process (computing) chemistry.chemical_element Nanotechnology chemistry Etching (microfabrication) Electromagnetic coil Deep reactive-ion etching Optoelectronics Deposition (phase transition) Reactive-ion etching business
Zdroj:	2012 7th International Conference on Electrical and Computer Engineering.
DOI:	10.1109/icece.2012.6471490
Popis:	An approach for controlling sidewall smoothness through deep reactive ion etch (DRIE) was developed for silicon micro-optical applications. The process relies on carefully controlled over-passivation of the etched sidewall during the etch/passivation cycles of the advanced Si etch (ASE) process. Several parameters of the ASE process such as etch/passivation cycle time, coil power, platen power, and etching gas flow were systematically varied to achieve an optimized process recipe. The rms roughness of the sidewall after gold deposition was found to be around 3.9 nm. Our structure represents the lowest reported sidewall roughness achieved using only a DRIE process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce903836c04b05ab18e5e877a11a323d https://doi.org/10.1109/icece.2012.6471490 Zobrazit plný text záznamu