Growth and characterization of Yb3+ doped Y2SiO5 layers on Y2SiO5 substrate for laser applications
| Autor: | M. Couchaud, B. Chambaz, F. Thibault, D. Pelenc, Bruno Viana, J. Petit |
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| Rok vydání: | 2008 |
| Předmět: |
Quenching
Materials science Absorption spectroscopy Dopant business.industry Organic Chemistry Doping Substrate (electronics) Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Inorganic Chemistry Optics Optoelectronics Electrical and Electronic Engineering Physical and Theoretical Chemistry Thin film business Refractive index Spectroscopy |
| Zdroj: | Optical Materials. 30:1289-1296 |
| ISSN: | 0925-3467 |
| Popis: | We report on the epitaxial growth and spectroscopic study of highly doped Y2SiO5:Yb3+ (YSO:Yb) thin films on YSO substrates. The realization of Ge, La and Gd-codoped high quality thin films, with thickness up to 100 μm, is demonstrated. YSO:Yb layers have their fluorescence and absorption spectra similar to the bulk ones, with a globally higher crystalline quality. The Yb3+ lifetime evolution exhibits a particularly slow decrease with Yb doping, proof of a low extrinsic quenching centers concentration. The refractive index increase with respect to dopants concentration is measured, and a phenomenological law is proposed. Such highly doped YSO:Yb layers could be an interesting alternative for active integrated optics or laser devices. |
| Databáze: | OpenAIRE |
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