| Autor: |
Tetsuya Kitagawa, Shinji Omori, Hirohisa Niu, Hiroyuki Nakano, Kumiko Oguni, Masatoshi Kotera, Masaki Yoshizawa, Shigeru Moriya |
| Rok vydání: |
2004 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:3518 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.1815308 |
| Popis: |
Exploring the resolution performance of various electron beam lithography with the acceleration voltage of 2–100kV showed that line edge roughness (LER) and resolution limit of resist patterns was in linear relation with blur of latent image profile. Reducing resist thickness is effective in decreasing the blur of low-energy electron-beam proximity projection lithography (LEEPL) because 47% of the blur is due to scattering of 2keV electrons in 70-nm-thick resist film. The impact of thinning the resist thickness on the LER and the exposure latitude in LEEPL was investigated by simulation and experiment. A Monte Carlo simulation shows that the LER of a 100-nm-width space pattern decreases to 5.5 from 10.4nm with reducing the resist thickness to 20 from 70nm. Exposing the photosensitive polyorganosilazane resists (Clariant (Japan) K.K.) by LEEPL-3000 underpinned that latent image quality was improved by thinning the resist. The exposure latitude of 80-nm-diameter dense contact holes increased to 25 from 16% ... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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