Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

Autor:	Yong-Hoon Cho, Bugeun Ki, Chulwon Lee, Jungwoo Oh, Jiwoong Baek
Rok vydání:	2015
Předmět:	Interconnection Materials science Silicon business.industry Annealing (metallurgy) Alloy chemistry.chemical_element engineering.material Laser law.invention symbols.namesake chemistry law Ultimate tensile strength symbols engineering Optoelectronics business Raman spectroscopy Photonic crystal
Zdroj:	2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).
DOI:	10.1109/cleopr.2015.7375928
Popis:	Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce84c55203d325eb45ec87610ec555de https://doi.org/10.1109/cleopr.2015.7375928 Zobrazit plný text záznamu