Prediction of GaAs MESFET process-induced variations using a device-physics-based analytical model

Autor:	D.P. Klemer, Juin J. Liou, Ko-Ming Shih
Rok vydání:	1994
Předmět:	chemistry.chemical_compound Materials science Fabrication chemistry Process (computing) Electronic engineering Semiconductor device modeling MESFET Sense (electronics) Physics based Device parameters Gallium arsenide
Zdroj:	Conference Record Southcon.
DOI:	10.1109/southc.1994.498109
Popis:	This paper presents results of the use of a device-physics-based MESFET analysis code to predict the effects of process-induced variations on MESFET parameters. Such an approach is useful for predicting device yields and sensitivities of device parameters to variations in device fabrication processes such as gate recess depth and device dimensions. Our simulation is general in the sense that it can allow for arbitrary doping profiles and velocity-field characteristics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce83b91fd11f4f6f2965ad0c157fff04 https://doi.org/10.1109/southc.1994.498109 Zobrazit plný text záznamu