A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors
| Autor: | T. Dullweber, H.W. Schock, Uwe Rau, G.H anna |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Renewable Energy
Sustainability and the Environment business.industry Chemistry Band gap Chalcopyrite Mineralogy Copper indium gallium selenide solar cells Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Semiconductor law visual_art Solar cell visual_art.visual_art_medium Optoelectronics business Absorption (electromagnetic radiation) Grading (tumors) Voltage |
| Zdroj: | Solar Energy Materials and Solar Cells. 67:145-150 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/s0927-0248(00)00274-9 |
| Popis: | High efficiencies in Cu(In,Ga)(S,Se)2 solar cells result from alloying CuInSe2 base material with the corresponding Ga- or S-containing compound. Compositional grading is one important issue in these devices. To obtain high efficiencies a reconstructed Cu-depleted absorber surface is essential. We consider this Cu/In grading non-intentional, process related and present a model which explains its importance. Another approach to improve performance is controlled intentional band gap grading via Ga/In and S/Se grading during the deposition. We show that appropriate grading can improve current and voltage of the device simultaneously. The key objective is to design a larger band gap for recombination and a lower band gap for absorption to energetically separate the mechanisms of carrier recombination and current generation. |
| Databáze: | OpenAIRE |
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