Reduction of insertion loss after annealing of silicon oxynitride optical waveguides

Autor: K. A. McGreer, He De-Yan
Rok vydání: 2002
Předmět:
Zdroj: Chinese Physics. 11:83-86
ISSN: 1741-4199
1009-1963
DOI: 10.1088/1009-1963/11/1/317
Popis: The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region. The waveguide structure consisted of a 2.0µm SiON waveguide core with a refractive index of 1.50, a 0.5µm SiO2 upper cladding and a 5.0µm SiO2 lower cladding with a refractive index of 1.45. It was found that the wavelength-dependent insertion losses of the waveguide were greatly reduced by annealing and the loss was decreased more than 5.7 dB/cm at 1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.
Databáze: OpenAIRE