Reduction of insertion loss after annealing of silicon oxynitride optical waveguides
Autor: | K. A. McGreer, He De-Yan |
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Rok vydání: | 2002 |
Předmět: | |
Zdroj: | Chinese Physics. 11:83-86 |
ISSN: | 1741-4199 1009-1963 |
DOI: | 10.1088/1009-1963/11/1/317 |
Popis: | The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region. The waveguide structure consisted of a 2.0µm SiON waveguide core with a refractive index of 1.50, a 0.5µm SiO2 upper cladding and a 5.0µm SiO2 lower cladding with a refractive index of 1.45. It was found that the wavelength-dependent insertion losses of the waveguide were greatly reduced by annealing and the loss was decreased more than 5.7 dB/cm at 1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing. |
Databáze: | OpenAIRE |
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