Impact of Carrier Accumulation on the Transient Behavior of p-Gate GaN HEMTs
| Autor: | Thorsten Oeder, Martin Pfost |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics 02 engineering and technology Transient (oscillation) business 01 natural sciences Layer (electronics) Voltage |
| Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2019.8757570 |
| Popis: | A measurement methodology is introduced to identify the characteristics of carrier accumulation in p-gate GaN HEMTs. To analyse the influence of the gate- and drain-biasing independently, the DUT is operated in a half-bridge configuration. Thereby, the gate can be charged prior to the onset of the drain-current. The impact can be observed in the transient drain-current behavior. Two commercially available 650 V-class devices are evaluated. To achieve enhancement-mode operation one of the devices utilizes a layer of p-AlGaN, while the other uses p-GaN. For both devices the time-, voltage- and current-dependencies of carrier accumulation are investigated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|