Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates
| Autor: | Matthew T. Hardy, D. S. Katzer, Brian P. Downey, Eric N. Jin, David J. Meyer, Neeraj Nepal |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Niobium nitride 02 engineering and technology Substrate (electronics) Edge (geometry) Epitaxy 01 natural sciences chemistry.chemical_compound Shutter 0103 physical sciences Materials Chemistry Silicon carbide Electrical and Electronic Engineering Instrumentation 010302 applied physics Transition metal nitrides business.industry Process Chemistry and Technology 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Optoelectronics Diffuse reflection 0210 nano-technology business |
| Zdroj: | Journal of Vacuum Science & Technology B. 38:032204 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/6.0000063 |
| Popis: | Noncontact band edge thermometry based on diffuse reflectance was used to monitor and control the substrate temperature rise during the MBE growth of niobium nitride transition metal nitrides on transparent, wide-bandgap silicon carbide substrates. Temperature transients as large as 135 °C are induced by changing the main substrate shutter state. The growth of niobium nitride films as thin as ∼5 nm leads to temperature increases as large as 240 °C. In addition, a temperature decrease during the growth of ultrawide-bandgap AlN films on niobium nitride was observed and characterized. The causes of the observed temperature excursions are explained by considering the Stefan–Boltzmann law, and ways to better control the substrate temperature are discussed. |
| Databáze: | OpenAIRE |
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