Dielectric reliability of 70nm pitch air-gap interconnect structures
| Autor: | Marianna Pantouvaki, Gerald Beyer, Hugo Bender, Koen Marrant, Farid Sebaai, Alain Moussa, Herbert Struyf, J. Versluijs, Bart Vereecke, Danny Goossens, Rudy Caluwaerts, Els Van Besien, Kristof Kellens |
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| Rok vydání: | 2011 |
| Předmět: |
Interconnection
Materials science business.industry Low-k dielectric Integrated circuit Condensed Matter Physics Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Multiple patterning Optoelectronics Electrical and Electronic Engineering Air gap (plumbing) business Scaling Reliability (statistics) |
| Zdroj: | Microelectronic Engineering. 88:1618-1622 |
| ISSN: | 0167-9317 |
| Popis: | Scaling air-gap interconnects to 70nm pitch is demonstrated for the first time by combining air-gap technology (SiO"2 etch-back and non-conformal CVD) and the double patterning approach. A capacitance reduction of 45% was measured on the air-gaps compared to the SiO"2 reference. The reliability performance of the air-gaps was then evaluated and it was found that the structures exceeded 10years lifetime at 2MV/cm, almost matching the performance of SiO"2 interconnects. Air-gaps could therefore make a promising low-RC solution for future technology nodes. |
| Databáze: | OpenAIRE |
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