Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer
Autor: | Zhanguo Wang, Quan Wang, Jiang Lijuan, Hongling Xiao, Meilan Hao, Cuimei Wang, Fengqi Liu, Chun Feng, Xiaoliang Wang, Xiangang Xu, Changxi Chen |
---|---|
Rok vydání: | 2018 |
Předmět: |
Materials science
business.industry Transistor Biomedical Engineering Bioengineering Algan gan 02 engineering and technology General Chemistry Trapping 021001 nanoscience & nanotechnology Condensed Matter Physics Buffer (optical fiber) law.invention Stress (mechanics) Fe doped law Optoelectronics General Materials Science 0210 nano-technology business High electron |
Zdroj: | Journal of Nanoscience and Nanotechnology. 18:7479-7483 |
ISSN: | 1533-4880 |
Databáze: | OpenAIRE |
Externí odkaz: |