A Program-Erasable High-$\kappa$$\hbox{Hf}_{0.3}{\hbox{N}}_{0.2}{\hbox{O}}_{0.5}$ MIS Capacitor With Good Retention
| Autor: | W.L. Huang, W.J. Chen, Chao-Ching Cheng, H.J. Yang, S.P. McAlister, Albert Chin, Iing Jar Hsieh |
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| Rok vydání: | 2007 |
| Předmět: |
Dynamic random-access memory
Materials science business.industry Electrical engineering Analytical chemistry Dielectric Capacitance MIS capacitor Electronic Optical and Magnetic Materials law.invention Non-volatile memory Capacitor law Erasure Electrical and Electronic Engineering business High-κ dielectric |
| Zdroj: | IEEE Electron Device Letters. 28:913-915 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2007.905375 |
| Popis: | We describe a programmable-erasable MIS capacitor with a single high-k Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of ~6.6 fF/mum2, low program and erase voltages of +5 and -5 V, respectively, and a large DeltaVfb memory window of 1.5 V. In addition, the 25degC data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5. |
| Databáze: | OpenAIRE |
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