Influence of thermal annealing on electrical and optical properties of Ga-doped ZnO thin films
| Autor: | Hisao Makino, Aki Miyake, Takahiro Itoh, Naoki Yamamoto, Yoshinori Hirashima, Hitoshi Hokari, Hiroaki Iwaoka, Tetsuya Yamamoto, Takahiro Yamada, Hisashi Aoki |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Annealing (metallurgy)
business.industry Chemistry Ion plating Metals and Alloys Mineralogy Surfaces and Interfaces Sputter deposition Drude model Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Hall effect Physical vapor deposition Materials Chemistry Optoelectronics Grain boundary Thin film business |
| Zdroj: | Thin Solid Films. 518:1386-1389 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2009.09.093 |
| Popis: | Influence of thermal annealing on electrical properties of GZO films has been studied by means of Hall effect measurements and optical characterization based on Drude model analysis for transmission and reflection spectra. Electrical resistivity increased with increasing annealing temperature. Changes of electrical properties were compared between air and N 2 gas atmosphere. Thermal stability in the air was worse compared to the N 2 gas atmosphere. Annealing at rather high temperature caused decrease in the Hall mobility and increase in optical mobility. The difference between the Hall mobility and the optical mobility was attributed to carrier scattering at grain boundaries. Three kinds of deposition method, ion plating using DC arc discharge, DC magnetron sputtering, and RF power superimposed DC magnetron sputtering were compared in terms of the thermal stability. |
| Databáze: | OpenAIRE |
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